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BF824W

Features: · Low current (max. 25 mA)· Low voltage (max. 30 V).Application· RF stages in FM front-ends in common base configuration.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter -30 VCEO collector-emitter...

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SeekIC No. : 004299562 Detail

BF824W: Features: · Low current (max. 25 mA)· Low voltage (max. 30 V).Application· RF stages in FM front-ends in common base configuration.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. ...

BF824W Data Sheet

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Part Number:
BF824W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Low current (max. 25 mA)
· Low voltage (max. 30 V).


Application

· RF stages in FM front-ends in common base configuration.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter
-30
VCEO collector-emitter voltage open base
-30
VEBO emitter-base voltage open collector
-
-4
V
IC collector current (DC)
-
-25
mA
ICM peak collector current
-
-25
mA
Ptot total power dissipation Tamb 25°C; note 1
-
200
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C
Tamb operating ambient temperature
-65
+150
°C



Description

PNP medium frequency transistor BF824W in a SOT323 plastic package.


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