MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92-3 D/C:N/A
BC636-16, BC636G, BC637 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-92-3
D/C: N/A
Description: TRANSISTOR NPN GP 60V 1A TO-92
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PDF/DataSheet Download
Datasheet: BC636-16
File Size: 58061 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BC6031PQ
File Size: 635650 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BC637
File Size: 189048 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Rating | Symbol |
Value |
Unit | |
| CollectorEmitter Voltage | VCEO | BC636 |
-45 |
Vdc |
| BC638 |
-60 |
Vdc | ||
| BC640 |
-80 |
Vdc | ||
| CollectorBase Voltage | VCBO | BC636 |
-45 |
Vdc |
| BC638 |
-60 |
Vdc | ||
| BC640 |
-80 |
Vdc | ||
| Emitter-Base Voltage | VEBO |
-5.0 |
Vdc | |
| Collector Current | IC |
-0.5 |
Adc | |
| Total Device Dissipation@ TA = 25 Derate above 25 |
PD |
625 5.0 |
Watt mW/ | |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
12.5 100 |
Watt mW/ | |
| Operating and Storage Junction Temperarture Range |
TJ:TSTG |
55 to +150 |
| Technical/Catalog Information | BC637 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Frequency - Transition | 200MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3, TO-226AA (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BC637 BC637 BC637OS ND BC637OSND BC637OS |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage BC635 BC637 BC639 |
open emitter | - - - |
45 60 100 |
V V V |
| VCEO | collector-emitter voltage BC635 BC637 BC639 |
open base | - - - |
45 60 80 |
V V V |
| VEBO | emitter-base voltage | open collector | - | 5 | V |
| IC | collector current (DC) | - | 1 | A | |
| ICM | peak collector current | - | 1.5 | A | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C | - | 0.83 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |
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