BB504C, BB504CDS-TL-E, BB504M Selling Leads, Datasheet
MFG:RENESAS Package Cooled:CMPAK-4 D/C:09+
BB504C, BB504CDS-TL-E, BB504M Datasheet download
Part Number: BB504C
MFG: RENESAS
Package Cooled: CMPAK-4
D/C: 09+
BB504C, BB504CDS-TL-E, BB504M
- Table of contents:
Info of BB504C
Info of BB504CDS-TL-E
Info of BB504M
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About BB504C
PDF/DataSheet Download
Datasheet: BB504C
File Size: 82040 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About BB501
PDF/DataSheet Download
Datasheet: BB501
File Size: 72751 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About BB504M
PDF/DataSheet Download
Datasheet: BB504M
File Size: 103417 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
BB504C Maximum Ratings
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDS |
6 |
V |
| Gate 1 to source voltage |
VG1S |
+6 0 |
V |
| Gate 2 to source voltage |
VG2S |
+6 0 |
V |
| Drain current |
ID |
30 |
mA |
| Channel power dissipation |
Pch |
100 |
mW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |
BB504C Features
· Build in Biasing Circuit; To reduce using parts cost & PC board space.
· Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
· High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
· Provide mini mold packages; CMPAK-4 (SOT-343mod)
· Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
· High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
· Provide mini mold packages; CMPAK-4 (SOT-343mod)
BB504M Maximum Ratings
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDS |
6 |
V |
| Gate 1 to source voltage |
VG1S |
+6 0 |
V |
| Gate 2 to source voltage |
VG2S |
+6 0 |
V |
| Drain current |
ID |
30 |
mA |
| Channel power dissipation |
Pch |
150 |
mW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |
BB504M Features
· Build in Biasing Circuit; To reduce using parts cost & PC board space.
· Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz
· High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
· Provide mini mold packages; MPAK-4 (SOT-143Rmod)
· Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz
· High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
· Provide mini mold packages; MPAK-4 (SOT-143Rmod)
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