BB501M, BB501MAS, BB501MAS-TL Selling Leads, Datasheet
MFG:RENESAS Package Cooled:SOT143 D/C:09+
BB501M, BB501MAS, BB501MAS-TL Datasheet download
Part Number: BB501M
MFG: RENESAS
Package Cooled: SOT143
D/C: 09+
BB501M, BB501MAS, BB501MAS-TL
- Table of contents:
Info of BB501M
Info of BB501MAS
Info of BB501MAS-TL
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About BB501M
PDF/DataSheet Download
Datasheet: BB501M
File Size: 72751 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About BB501
PDF/DataSheet Download
Datasheet: BB501
File Size: 72751 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About BB501
PDF/DataSheet Download
Datasheet: BB501
File Size: 72751 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
BB501M Maximum Ratings
| Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDS |
6 |
V |
| Gate 1 to source voltage |
VG1S |
+6 0 |
V |
| Gate 2 to source voltage |
VG2S |
+6 0 |
V |
| Drain current |
ID |
20 |
mA |
| Channel power dissipation |
Pch |
150 |
mW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |
BB501M Features
· Build in Biasing Circuit; To reduce using parts cost & PC board space.
· High gain; PG = 21.5 dB typ. at f = 900 MHz
· Low noise; NF = 1.85 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
· Provide mini mold packages; MPAK-4(SOT-143mod)
· High gain; PG = 21.5 dB typ. at f = 900 MHz
· Low noise; NF = 1.85 dB typ. at f = 900 MHz
· Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
· Provide mini mold packages; MPAK-4(SOT-143mod)
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