ARF449A, ARF449B, ARF460A Selling Leads, Datasheet
MFG:Microsemi Package Cooled:???TO-247CS D/C:08+/09+
ARF449A, ARF449B, ARF460A Datasheet download
Part Number: ARF449A
MFG: Microsemi
Package Cooled: ???TO-247CS
D/C: 08+/09+
ARF449A, ARF449B, ARF460A
- Table of contents:
Info of ARF449A
Info of ARF449B
Info of ARF460A
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About ARF449A
PDF/DataSheet Download
Datasheet: ARF449A
File Size: 59892 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About ARF449B
PDF/DataSheet Download
Datasheet: ARF449B
File Size: 59892 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About ARF1500
PDF/DataSheet Download
Datasheet: ARF1500
File Size: 117150 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
ARF449A General Description
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
ARF449A Maximum Ratings
| MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. |
|||
| Symbol | Parameter | ARF449A/449B | UNIT |
| VDSS | Drain-Source Voltage | 450 | Volts |
| V DGO |
Drain-Gate Voltage | 450 | |
| I D |
Continuous Drain Current @ TC = 25 °C |
9 | Amps |
| V GS |
Gate-Source Voltage | ±30 |
Volts |
| P D |
Total Power Dissipation @ TC = 25 °C |
165 | Watts |
| R JC |
Junction to Case | 0.76 | °C/W |
| T ,T J STG |
Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| T L |
Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
ARF449A Features
* Low Cost Common Source RF Package.
* Specified 150 Volt, 81.36 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 150 Watts.
* Low Thermal Resistance.
* Gain = 13dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
* Specified 150 Volt, 81.36 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 150 Watts.
* Low Thermal Resistance.
* Gain = 13dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
ARF449B General Description
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
ARF449B Maximum Ratings
| MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. |
|||
| Symbol | Parameter | ARF449A/449B | UNIT |
| VDSS | Drain-Source Voltage | 450 | Volts |
| V DGO |
Drain-Gate Voltage | 450 | |
| I D |
Continuous Drain Current @ TC = 25 °C |
9 | Amps |
| V GS |
Gate-Source Voltage | ±30 |
Volts |
| P D |
Total Power Dissipation @ TC = 25 °C |
165 | Watts |
| R JC |
Junction to Case | 0.76 | °C/W |
| T ,T J STG |
Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| T L |
Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
ARF449B Features
* Low Cost Common Source RF Package.
* Specified 150 Volt, 81.36 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 150 Watts.
* Low Thermal Resistance.
* Gain = 13dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
* Specified 150 Volt, 81.36 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 150 Watts.
* Low Thermal Resistance.
* Gain = 13dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
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