ARF3710, ARF445, ARF446 Selling Leads, Datasheet
MFG:Microsemi Package Cooled:???TO-247CS D/C:08+/09+
ARF3710, ARF445, ARF446 Datasheet download
Part Number: ARF3710
MFG: Microsemi
Package Cooled: ???TO-247CS
D/C: 08+/09+
ARF3710, ARF445, ARF446
- Table of contents:
Info of ARF3710
Info of ARF445
Info of ARF446
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About ARF1500
PDF/DataSheet Download
Datasheet: ARF1500
File Size: 117150 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About ARF445
PDF/DataSheet Download
Datasheet: ARF445
File Size: 66036 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About ARF446
PDF/DataSheet Download
Datasheet: ARF446
File Size: 62673 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
ARF445 General Description
The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,
commercial, medical and industrial RF power amplifier applications.
commercial, medical and industrial RF power amplifier applications.
ARF445 Maximum Ratings
| MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. |
|||
| Symbol | Parameter | ARF444/445 | UNIT |
| VDSS | Drain-Source Voltage | 900 | Volts |
| V DGO |
Drain-Gate Voltage | 900 | |
| I D |
Continuous Drain Current @ TC = 25 °C |
6.5 | Amps |
| V GS |
Gate-Source Voltage | ±30 |
Volts |
| P D |
Total Power Dissipation @ TC = 25 °C |
208 | Watts |
| R JC |
Junction to Case | 0.60 | °C/W |
| T ,T J STG |
Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| T L |
Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
ARF445 Features
* Specified 300 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.
* Output Power = 300 Watts. * Very High Breakdown for Improved Ruggedness.
* Gain = 18.7dB (Typ.) * Low Thermal Resistance.
* Efficiency = 83% (Typ.) * Nitride Passivated Die for Improved Reliability.
* Output Power = 300 Watts. * Very High Breakdown for Improved Ruggedness.
* Gain = 18.7dB (Typ.) * Low Thermal Resistance.
* Efficiency = 83% (Typ.) * Nitride Passivated Die for Improved Reliability.
ARF446 General Description
The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
ARF446 Maximum Ratings
| MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. |
|||
| Symbol | Parameter | ARF446/447 | UNIT |
| VDSS | Drain-Source Voltage | 900 | Volts |
| V DGO |
Drain-Gate Voltage | 900 | |
| I D |
Continuous Drain Current @ TC = 25 °C |
6.5 | Amps |
| V GS |
Gate-Source Voltage | ±30 |
Volts |
| P D |
Total Power Dissipation @ TC = 25 °C |
230 | Watts |
| R JC |
Junction to Case | 0.55 | °C/W |
| T ,T J STG |
Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| T L |
Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
ARF446 Features
* Low Cost Common Source RF Package.
* Specified 250 Volt, 40.68 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 250 Watts.
* Low Thermal Resistance.
* Gain = 15dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
* Specified 250 Volt, 40.68 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 250 Watts.
* Low Thermal Resistance.
* Gain = 15dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%
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