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Avalanche Current 1 (Repetitive and Non-Repetitive)
35
EAR
Repetitive Avalanche Energy 1
30
mJ
EAS
Single Pulse Avalanche Energy 4
1300
APT5014SFLLG Parameters
Technical/Catalog Information
APT5014SFLLG
Vendor
Microsemi-PPG
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
35A
Rds On (Max) @ Id, Vgs
140 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds
3261pF @ 25V
Power - Max
403W
Packaging
Tube
Gate Charge (Qg) @ Vgs
72nC @ 10V
Package / Case
D³Pak (2 leads + tab)
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
APT5014SFLLG APT5014SFLLG
APT5014SLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT5014SLL Maximum Ratings
Symbol
Parameter
APT5014
UNIT
VDSS
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25
35
Amps
IDM
Pulsed Drain Current
140
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25
400
Watts
Linear Derating Factor
3.2
W/
TJ,TSTG
Operating and StorageTemperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current(Repetitive and Non-Repetitive)
32
Amps
EAR
Repetitive Avalanche Energy
30
mJ
EAS
Single Pulse Avalanche Energy
1300
APT5014SLL Features
• Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package