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APT1001RSVR, APT10021JFLL, APT10021JLL

Table of contents:
Info of APT1001RSVR
Info of APT10021JFLL
Info of APT10021JLL

APT1001RSVR, APT10021JFLL, APT10021JLL Selling Leads, Datasheet

MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:APT D/C:06+

APT1001RSVR, APT10021JFLL, APT10021JLL Picture

APT1001RSVR, APT10021JFLL, APT10021JLL Datasheet download

Five Points

Part Number: APT1001RSVR

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Package Cooled: APT

D/C: 06+

Description: MOSFET N-CH 37A 1000V SOT-227

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APT1001RSVR Maximum Ratings

Symbol	Parameter	APT1001RSVR	UNIT
V_DSS	Drain-Source Voltage	1000	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	11	Amps
I_DM	Pulsed Drain Current	44	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	280	Watts
P_D	Linear Derati	2.24	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	11	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1210	mJ

APT1001RSVR Features

Faster Switching

100% Avalanche Tested

Lower Leakage

Surface Mount D³ PAK Package

APT10021JFLL Parameters

Technical/Catalog Information	APT10021JFLL
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	37A
Rds On (Max) @ Id, Vgs	210 mOhm @ 18.5A, 10V
Input Capacitance (Ciss) @ Vds	9750pF @ 25V
Power - Max	694W
Packaging	Tube
Gate Charge (Qg) @ Vgs	395nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT10021JFLL APT10021JFLL

APT10021JFLL Maximum Ratings

Symbol	Parameter	APT10021JFLL	UNIT
V_DSS	Drain-Source Voltage	1000	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	37	Amps
I_DM	Pulsed Drain Current	148	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	690	Watts
P_D	Linear Derati	5.52	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	37	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	3600	mJ

APT10021JFLL Features

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 Package

APT10021JLL Parameters

Technical/Catalog Information	APT10021JLL
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	37A
Rds On (Max) @ Id, Vgs	210 mOhm @ 18.5A, 10V
Input Capacitance (Ciss) @ Vds	9750pF @ 25V
Power - Max	694W
Packaging	Tube
Gate Charge (Qg) @ Vgs	395nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT10021JLL APT10021JLL

APT10021JLL Maximum Ratings

Symbol	Parameter	APT10021JLL	UNIT
V_DSS	Drain-Source Voltage	1000	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	37	Amps
I_DM	Pulsed Drain Current	148	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	690	Watts
P_D	Linear Derati	5.52	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	37	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	3600	mJ

APT10021JLL Features