MFG:Microsemi-PPG Category:Discrete Semiconductor Products Package Cooled:APT D/C:06+
APT10025JLC, APT10025JN, APT10025JVFR Datasheet download
Category: Discrete Semiconductor Products
MFG: Microsemi-PPG
Package Cooled: APT
D/C: 06+
Description: MOSFET N-CH 1000V 34A SOT-227
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PDF/DataSheet Download
Datasheet: APT10025JLC
File Size: 36747 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT1001
File Size: 36626 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT10025JVFR
File Size: 75329 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
| Symbol | Parameter | APT10025JLC | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
34 | Amps |
| IDM | Pulsed Drain Current |
136 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 700 | Watts |
| Linear Derati | 5.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
34 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3600 |
Lower Gate Charge
Lower Input Capacitance
Faster Switching
Easier To Drive
100% Avalanche Tested
Popular SOT-227 Package
| Technical/Catalog Information | APT10025JVFR |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 18000pF @ 25V |
| Power - Max | 700W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 990nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT10025JVFR APT10025JVFR |
| Symbol | Parameter | APT10025JVFR | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
34 | Amps |
| IDM | Pulsed Drain Current |
136 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 700 | Watts |
| Linear Derati | 5.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
34 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3600 |
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching
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