AOU413, AOU414, AOU436 Selling Leads, Datasheet
MFG:AO Package Cooled:TO-251
AOU413, AOU414, AOU436
- Table of contents:
Info of AOU413
Info of AOU414
Info of AOU436
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About AOU413
PDF/DataSheet Download
Datasheet: AOU413
File Size: 388860 KB
Manufacturer: ALPHA
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About AOU414
PDF/DataSheet Download
Datasheet: AOU414
File Size: 381494 KB
Manufacturer: ALPHA
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About AOU436
PDF/DataSheet Download
Datasheet: AOU436
File Size: 73752 KB
Manufacturer: AOSMD [Alpha & Omega Semiconductors]
Download : Click here to Download
AOU413 General Description
The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical.
AOU413 Maximum Ratings
|
Parameter |
Symbol |
Maximum |
Units | |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
-40 ±20 |
V V | |
| Continuous Drain Current G |
TA=25°C TA=100°C |
ID |
-12 -12 |
A |
| Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C |
IDM IAR EAR |
-30 30 -12 |
mJ | |
| Power Dissipation B | TC=25°C TC=100°C |
PD |
50 25 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
°C | |
AOU413 Features
·VDS (V) = -40V
·ID = -12A (VGS = -10V)
·RDS(ON) < 45mΩ (VGS = -10V)
·RDS(ON) < 69mΩ (VGS = -4.5V)
·ID = -12A (VGS = -10V)
·RDS(ON) < 45mΩ (VGS = -10V)
·RDS(ON) < 69mΩ (VGS = -4.5V)
AOU413 Connection Diagram
AOU414 General Description
The AOU414 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pbfree (meets ROHS & Sony 259 specifications). AOU414L is a Green Product ordering option. AOU414 and AOU414L are electrically identical.
AOU414 Maximum Ratings
|
Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | |
| Gate-Source Voltage |
VGS |
±20 | ||
| Continuous Drain Curren B,G | TA = 25G |
ID |
85 |
A |
| TA = 70B |
73 | |||
| Pulsed Drain Current |
IDM |
200 | ||
| Avalanche Current C |
IAR |
30 |
A | |
| Repetitive avalanche energy L=0.1mH C |
EAR |
140 |
mJ | |
| Power Dissipation B | TA = 25 |
PD |
100 |
W |
| TA = 70 |
50 | |||
| Operating Junction and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
||
AOU414 Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
R DS(ON) < 5.7m (VGS = 10V)
R DS(ON) < 7.5m (VGS = 4.5V)
ID = 85A (VGS = 10V)
R DS(ON) < 5.7m (VGS = 10V)
R DS(ON) < 7.5m (VGS = 4.5V)
AOU436 General Description
The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications). AOU436L is a Green Product ordering option. AOU436 and AOU436L are electrically identical.
AOU436 Maximum Ratings
| Parameter | Symbol | Maximum | Units | |
| Drain-Source Voltage | VDS |
30 | V | |
| Gate-Source Voltage | VGS |
±20 | V | |
| Continuous Drain CurrentB, |
TC =25!a | ID |
50 | A |
TC=100!aCB |
40 | |||
| Pulsed Drain Current | IDM |
100 | ||
| Avalanche CurrentC | IAR |
30 | A | |
| Repetitive avalanche energy L=0.1mHC | EAR |
143 | mJ | |
| Power Dissipation B | TC =25!a |
PD |
50 | W |
| TC=100!a |
25 | |||
| Junction and Storage Temperature Range | TJ,TSTG |
-55 to 175 | ||
AOU436 Features
`VDS (V) = 30V
`ID= 57A(VGS = 10V)
`RDS(ON) < 8.5m (VGS = 10V)
`RDS(ON) < 14m (VGS = 4.5V)
`ID= 57A(VGS = 10V)
`RDS(ON) < 8.5m (VGS = 10V)
`RDS(ON) < 14m (VGS = 4.5V)
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