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AO8801L, AO8802, AO8803

AO8801L, AO8802, AO8803 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc  Category:Discrete Semiconductor Products  Package Cooled:TSSOP8  D/C:2005

AO8801L, AO8802, AO8803 Picture

AO8801L, AO8802, AO8803 Datasheet download

Five Points

Part Number: AO8801L

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc

Package Cooled: TSSOP8

D/C: 2005

Description: MOSFET DUAL P-CH -12V -7A 8TSSOP

 

 
 
 
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About AO8801L

PDF/DataSheet Download

Datasheet: AO8801L

File Size: 115798 KB

Manufacturer: Alpha & Omega Semiconductors

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  • AO8802

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  • AO8403

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  • AO8701

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  • AO8800

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About AO8802

PDF/DataSheet Download

Datasheet: AO8802

File Size: 361652 KB

Manufacturer: ETC [ETC]

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  • AO8803

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    (11)
  • AO8403

  • Vendor: AOS Pack: TSSOP D/C: 05+& Qty: 3000  Adddate: 2024-12-19
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About AO8803

PDF/DataSheet Download

Datasheet: AO8803

File Size: 432700 KB

Manufacturer: ALPHA

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AO8802 General Description

The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

AO8802 Maximum Ratings

Paramete Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID 8 A
TA=70°C 6.3
Pulsed Drain Current B IDM 30
Power Dissipation A TA=25°C PD 1.5 W
TA=70°C 1.08
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

AO8802 Features

VDS (V) = 20V
ID = 8A
RDS(ON) < 13m  (VGS = 10V)
RDS(ON)  < 14m ( VGS = 4.5V)
RDS(ON)  < 19m  (VGS = 2.5V)
RDS(ON)  < 27m  (VGS = 1.8V)

AO8803 Parameters

Technical/Catalog InformationAO8803
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs18 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds 4750pF @ 6V
Power - Max1.4W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs44nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO8803
AO8803
785 1095 2 ND
78510952ND
785-1095-2

AO8803 General Description

The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8803L are electrically identical.

AO8803 Maximum Ratings

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-12
±8
V
V
Continuous Drain
Current A
TC=25°C G
TC=70°C B
ID
-7
-5.8
A
Pulsed Drain CurrentB
IDM
-20
Power Dissipation A
TC=25°C
TC=70°C

PD
1.4
0.9
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C

AO8803 Features

·VDS (V) = -12V
·ID = -7 A (VGS = -4.5V)
·RDS(ON) < 18mΩ (VGS = -4.5V)
·RDS(ON) < 22mΩ (VGS = -2.5V)
·RDS(ON) < 29mΩ (VGS = -1.8V)
·ESD Rating: 4KV HBM

AO8803 Connection Diagram

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