Features: VDS (V) = -30VID = -4.2ARDS(ON) < 50m (VGS = 10V)RDS(ON) < 65m (VGS = 4.5V)RDS(ON) < 120m (VGS = 2.5V)Specifications Paramete Symbol MOSFET Schottky Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current A TA=25°C...
AO8701L: Features: VDS (V) = -30VID = -4.2ARDS(ON) < 50m (VGS = 10V)RDS(ON) < 65m (VGS = 4.5V)RDS(ON) < 120m (VGS = 2.5V)Specifications Paramete Symbol MOSFET Schottky Units Drain-Source...
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Paramete | Symbol | MOSFET | Schottky | Units | |
Drain-Source Voltage | VDS | -30 | V | ||
Gate-Source Voltage | VGS | ±12 | V | ||
Continuous Drain Current A | TA=25°C | ID | -4.2 | A | |
TA=70°C | -3.5 | ||||
Pulsed Drain Current B | IDM | -30 | |||
Schottky reverse voltage | VKA | 30 | V | ||
Continuous Forward Current A | TA=25°C | IF | 3 | A | |
TA=70°C | 2 | ||||
Pulsed Drain Current B | IFM | 40 | |||
Power Dissipation | TA=25°C | PD | 1.4 | 1.4 | W |
TA=70°C | 1 | 1 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 | °C |