8ETH06FP, 8ETH06FPPBF, 8ETH06PBF Selling Leads, Datasheet
MFG:IR Package Cooled:09+ D/C:TO
8ETH06FP, 8ETH06FPPBF, 8ETH06PBF Datasheet download
Part Number: 8ETH06FP
MFG: IR
Package Cooled: 09+
D/C: TO
8ETH06FP, 8ETH06FPPBF, 8ETH06PBF
- Table of contents:
Info of 8ETH06FP
Info of 8ETH06FPPBF
Info of 8ETH06PBF
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About 8ETH06FP
PDF/DataSheet Download
Datasheet: 8ETH06FP
File Size: 210972 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 8ETH03
PDF/DataSheet Download
Datasheet: 8ETH03
File Size: 203981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 8ETH03
PDF/DataSheet Download
Datasheet: 8ETH03
File Size: 203981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
8ETH06FP General Description
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.
8ETH06FP Maximum Ratings
| Parameters | Max | Units |
| VRRM Peak Repetitive Reverse Voltage | 600 | V |
| IF(AV) Average Rectified Forward Current@ TC = 144°C @ TC = 108°C (FULLPACK) |
8 | A |
| IFSM Non Repetitive Peak Surge Current @ TJ = 25°C (FULLPACK) |
90 100 | |
| IFM Peak Repetitive Forward Current | 16 | |
| TJ, TSTG Operating Junction and Storage Temperatures | - 65 to 175 | °C |
8ETH06FP Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
8ETH06FP Typical Application
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
8ETH06FPPBF General Description
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
8ETH06FPPBF Maximum Ratings
| Parameters | Max | Units | |
| VRRM | Peak Repetitive Reverse Voltage | 600 | V |
| IF(AV) | Average Rectified Forward Current @ TC = 144 @ TC = 108 (FULLPACK) |
8 | A |
| IFSM | Non Repetitive Peak Surge Current @ TJ = 25 (FULLPACK) | 90 100 | |
| IFM | Peak Repetitive Forward Current | 16 | |
| TJ,TSTG | Operating Junction and Storage Temperatures | - 65 to 175 |
8ETH06FPPBF Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175 Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
• Lead-Free ("PbF")
• Low Forward Voltage Drop
• Low Leakage Current
• 175 Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
• Lead-Free ("PbF")
8ETH06PBF General Description
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
8ETH06PBF Maximum Ratings
| Parameters | Max | Units | |
| VRRM | Peak Repetitive Reverse Voltage | 600 | V |
| IF(AV) | Average Rectified Forward Current @ TC = 144 @ TC = 108 (FULLPACK) |
8 | A |
| IFSM | Non Repetitive Peak Surge Current @ TJ = 25 (FULLPACK) | 90 100 | |
| IFM | Peak Repetitive Forward Current | 16 | |
| TJ,TSTG | Operating Junction and Storage Temperatures | - 65 to 175 |
8ETH06PBF Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175 Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
• Lead-Free ("PbF")
• Low Forward Voltage Drop
• Low Leakage Current
• 175 Operating Junction Temperature
• 2500V insulation voltage
• UL E78996 approved
• Lead-Free ("PbF")
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