8ETH06-1PBF, 8ETH06SPBF, 8ETH08S Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-263AB D/C:2010+
8ETH06-1PBF, 8ETH06SPBF, 8ETH08S Datasheet download
Part Number: 8ETH06-1PBF
MFG: Vishay
Package Cooled: TO-263AB
D/C: 2010+
8ETH06-1PBF, 8ETH06SPBF, 8ETH08S
- Table of contents:
Info of 8ETH06-1PBF
Info of 8ETH06SPBF
Info of 8ETH08S
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About 8ETH03
PDF/DataSheet Download
Datasheet: 8ETH03
File Size: 203981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 8ETH03
PDF/DataSheet Download
Datasheet: 8ETH03
File Size: 203981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About 8ETH03
PDF/DataSheet Download
Datasheet: 8ETH03
File Size: 203981 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
8ETH06-1PBF General Description
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
8ETH06-1PBF Maximum Ratings
| PARAMETER | SYMBOL | TEST CONDITIONS | MAX. | UNITS |
| Peak repetitive reverse voltage | VRRM | 600 | V | |
| Average rectified forward current | IF(AV) | TC = 140 | 8 | A |
| Non-repetitive peak surge current | IFSM | TJ = 25 | 90 | |
| Peak repetitive forward current | IFM | 16 | ||
| Operating junction and storage temperatures | TJ, TStg | - 65 to 175 |
8ETH06-1PBF Features
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for Q101 level
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for Q101 level
8ETH06SPBF General Description
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
8ETH06SPBF Maximum Ratings
| PARAMETER | SYMBOL | TEST CONDITIONS | MAX. | UNITS |
| Peak repetitive reverse voltage | VRRM | 600 | V | |
| Average rectified forward current | IF(AV) | TC = 140 | 8 | A |
| Non-repetitive peak surge current | IFSM | TJ = 25 | 90 | |
| Peak repetitive forward current | IFM | 16 | ||
| Operating junction and storage temperatures | TJ, TStg | - 65 to 175 |
8ETH06SPBF Features
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for Q101 level
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for Q101 level
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