5N60, 5N6001, 5N80 Selling Leads, Datasheet
Package Cooled:. D/C:06+
Package Cooled:. D/C:06+
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Datasheet: 5N60
File Size: 181952 KB
Manufacturer: UTC
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 5N60
File Size: 181952 KB
Manufacturer: UTC
Download : Click here to Download
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
The 5N60 is the abbreviation of UTC5N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC5N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 6.5 pF);(5)ultra low gate charge (typical 15 nC);(6)RDS(ON)=2.5 @VGS=10 V.
The absolute maximum ratings of the UTC5N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current:4.5 A;(4)continuous drain current (Tc=25°C):4.5 A;(5)continuous drain current (Tc=100°C):2.6 A;(6)pulsed drain current:18 A;(7)avalanche energy single pulsed:210 mJ;(8)avalanche energy repetitive:10 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:147 W (TO-220) or 48 W (TO-220F);(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the UTC5N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .