Features: RDS(ON) = 2.5Ω @VGS = 10 V
Ultra low gate charge ( typical 15 nC )
Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
Fast switching capability
Avalanche energy Specified
Improved dv/dt capability, high ruggedness Specifications
| PARAMETER |
SYMBOL |
RATINGS |
UNIT |
| Drain-Source Voltage |
VDSS |
600 |
V |
| Gate-Source Voltage |
VDSS |
±30 |
V |
| Avalanche Current (Note 1) |
IAR |
4.5 |
A |
| Continuous Drain Current |
TC = 25 .. |
ID |
4,5 |
A |
| TC = 100 .. |
2.6 |
A |
| Pulsed Drain Current (Note 1) |
IDM |
18 |
A |
| Avalanche Energy, Single Pulsed (Note 2) |
EAS |
210 |
mJ |
| Avalanche Energy, Repetitive Limited by TJ(MAX) |
EAR |
10 |
mJ |
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns |
| Power Dissipation |
TC = 25 .. |
PD |
100 |
W |
| Derate above 25 .. |
0.8 |
W/ .. |
| Junction Temperature |
|
TJ |
+150 |
.. |
| Operating and Storage Temperature |
|
TSTG |
-55 ~ +150 |
.. |
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. DescriptionThe 5N60 is the abbreviation of UTC5N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC5N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 6.5 pF);(5)ultra low gate charge (typical 15 nC);(6)RDS(ON)=2.5 @VGS=10 V.
The absolute maximum ratings of the UTC5N60 can be summarized as:(1)drain-source voltage:600 V;(2)gate-source voltage:±30 V;(3)avalanche current:4.5 A;(4)continuous drain current (Tc=25°C):4.5 A;(5)continuous drain current (Tc=100°C):2.6 A;(6)pulsed drain current:18 A;(7)avalanche energy single pulsed:210 mJ;(8)avalanche energy repetitive:10 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:147 W (TO-220) or 48 W (TO-220F);(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the UTC5N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .
The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET 5N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
5N60 Data Sheet
