3N7DF7101, 3N80, 3N81 Selling Leads, Datasheet
MFG:IR Package Cooled:2 D/C:5412
MFG:IR Package Cooled:2 D/C:5412
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Datasheet:
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PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
PARAMETER | SYMBOL | RATINGS | UNIT | |
Drain-Source Voltage (VGS=0V) | VDSS | 800 | V | |
Drain-Gate Voltage (RG=20k) | VDGR | 800 | V | |
Gate-Source Voltage | VGSS | ±30 | V | |
Gate-Source Breakdown Voltage (IGS=±1mA) | BVGSO | 30(MIN) | V | |
Gate Source ESD(HBM-C=100pF, R=1.5K) | VESD(G-S) | 2 | V | |
Insulation Withstand Voltage (DC) | TO-220F | VISO | 2500 | V |
Avalanche Current (Note 2) | IAR | 2.5 | A | |
Continuous Drain Current | ID | 2.5 | A | |
Pulsed Drain Current | IDM | 10 | A | |
Single Pulse Avalanche Energy (Note 3) | EAS | 170 | mJ | |
Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |
Power Dissipation | TO-220 | PD | 70 | W |
TO-220F | 25 | |||
Junction Temperature | TJ | +150 | ||
Storage Temperature | TSTG | -55 ~ +150 |