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3N7DF7101, 3N80, 3N81

3N7DF7101, 3N80, 3N81 Selling Leads, Datasheet

MFG:IR  Package Cooled:2  D/C:5412

3N7DF7101, 3N80, 3N81 Picture

3N7DF7101, 3N80, 3N81 Datasheet download

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Part Number: 3N7DF7101

 

MFG: IR

Package Cooled: 2

D/C: 5412

 

 

 
 
 
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3N80 Suppliers

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  • 3N80

  • Qty: 10000 Note: every time with large quantity in stock  Adddate: 2024-12-24
  • Inquire Now
  • golden hongfa electronic co.ltd   China
    Contact: Ms.Sam wong   MSN:cnghf5@hotmail.com
    Tel: 86-020-83320105
    Fax: 86-20-83321437
    (321)
  • 3N80

  • Qty: 10000 Note: every time with large quantity in stock  Adddate: 2024-12-24
  • Inquire Now
  • golden hongfa electronic co.ltd   China
    Contact: Ms.Sam wong   MSN:cnghf5@hotmail.com
    Tel: 86-020-83320105
    Fax: 86-20-83321437
    (321)
  • 3N84

  • Pack: CAN D/C: 01+& Qty: 800  Adddate: 2024-12-24
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  • HK UNI-MEGA Electronic Tech Ltd   Hong
    Contact: Mr.Frank Frank   MSN:unimega88@hotmail.com
    Tel: 00852-00852-00852-62112978
    Fax: 00852-00852-00852-6211-2396
    (2)

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3N81 Suppliers

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  • 3N80

  • Qty: 10000 Note: every time with large quantity in stock  Adddate: 2024-12-24
  • Inquire Now
  • golden hongfa electronic co.ltd   China
    Contact: Ms.Sam wong   MSN:cnghf5@hotmail.com
    Tel: 86-020-83320105
    Fax: 86-20-83321437
    (321)
  • 3N84

  • Pack: CAN D/C: 01+& Qty: 800  Adddate: 2024-12-24
  • Inquire Now
  • HK UNI-MEGA Electronic Tech Ltd   Hong
    Contact: Mr.Frank Frank   MSN:unimega88@hotmail.com
    Tel: 00852-00852-00852-62112978
    Fax: 00852-00852-00852-6211-2396
    (2)

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3N80 General Description

The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

3N80 Maximum Ratings

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage (VGS=0V) VDSS 800 V
Drain-Gate Voltage (RG=20k) VDGR 800 V
Gate-Source Voltage VGSS ±30 V
Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V
Gate Source ESD(HBM-C=100pF, R=1.5K) VESD(G-S) 2 V
Insulation Withstand Voltage (DC) TO-220F VISO 2500 V
Avalanche Current (Note 2) IAR 2.5 A
Continuous Drain Current ID 2.5 A
Pulsed Drain Current IDM 10 A
Single Pulse Avalanche Energy (Note 3) EAS 170 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation TO-220 PD 70 W
TO-220F 25
Junction Temperature TJ +150
Storage Temperature TSTG -55 ~ +150

Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
             Absolute maximum ratings are stress ratings only and functional device operation is not implied.
          2.Pulse width limited by TJ(MAX)
          3.starting TJ=25 , ID=IAR, VDD=50V
          4.ISD2.5A, di/dt200A/s, VDDBVDSS, TJTJ(MAX).

3N80 Features

`RDS(ON)=3.8 @VGS=10 V
`Ultra low gate charge ( typical 19 nC )
`Low reverse transfer capacitance ( CRSS = typical 11 pF )
`Fast switching capability
`Avalanche energy specified
`Improved dv/dt capability, high ruggedness

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