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3N80

Features: `RDS(ON)=3.8 @VGS=10 V`Ultra low gate charge ( typical 19 nC )`Low reverse transfer capacitance ( CRSS = typical 11 pF )`Fast switching capability`Avalanche energy specified`Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Vol...

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SeekIC No. : 004230052 Detail

3N80: Features: `RDS(ON)=3.8 @VGS=10 V`Ultra low gate charge ( typical 19 nC )`Low reverse transfer capacitance ( CRSS = typical 11 pF )`Fast switching capability`Avalanche energy specified`Improved dv/dt...

3N80 Data Sheet

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Part Number:
3N80
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`RDS(ON)=3.8 @VGS=10 V
`Ultra low gate charge ( typical 19 nC )
`Low reverse transfer capacitance ( CRSS = typical 11 pF )
`Fast switching capability
`Avalanche energy specified
`Improved dv/dt capability, high ruggedness


Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage (VGS=0V) VDSS 800 V
Drain-Gate Voltage (RG=20k) VDGR 800 V
Gate-Source Voltage VGSS ±30 V
Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V
Gate Source ESD(HBM-C=100pF, R=1.5K) VESD(G-S) 2 V
Insulation Withstand Voltage (DC) TO-220F VISO 2500 V
Avalanche Current (Note 2) IAR 2.5 A
Continuous Drain Current ID 2.5 A
Pulsed Drain Current IDM 10 A
Single Pulse Avalanche Energy (Note 3) EAS 170 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation TO-220 PD 70 W
TO-220F 25
Junction Temperature TJ +150
Storage Temperature TSTG -55 ~ +150

Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
             Absolute maximum ratings are stress ratings only and functional device operation is not implied.
          2.Pulse width limited by TJ(MAX)
          3.starting TJ=25 , ID=IAR, VDD=50V
          4.ISD2.5A, di/dt200A/s, VDDBVDSS, TJTJ(MAX).


Description

The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This 3N80 is suitable for use as a load switch or in PWM applications.




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