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2SJ103-Y, 2SJ104, 2SJ105

Table of contents:
Info of 2SJ103-Y
Info of 2SJ104
Info of 2SJ105

2SJ103-Y, 2SJ104, 2SJ105 Selling Leads, Datasheet

MFG:TOS Package Cooled:TO-92 D/C:06+

2SJ103-Y, 2SJ104, 2SJ105 Datasheet download

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Part Number: 2SJ103-Y

MFG: TOS

Package Cooled: TO-92

D/C: 06+

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2SJ104 Maximum Ratings

Characteristics	Symbol	Rating	Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range	V_GDS I_G P_D T_j T_stg	25 -10 400 125 -55~125	V mA mW

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conce and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SJ104 Typical Application

`High input impedance: I_GSS = 1.0 nA (max) (V_GS= 25 V)
`Low R_DS(ON) = 40(typ.) (I_DSS= 5 mA)
`Complimentary to 2SK364

2SJ105 Maximum Ratings

Characteristics	Symbol	Rating	Unit
Gate-drain voltage	V_GDS	50	V
Gate current	I_G	-10	mA
Drain power dissipation	P_D	200	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	?55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SJ105 Typical Application

• High breakdown voltage: V_GDS = 50 V
• High input impedance: I_GSS = 1.0 nA (max) (V_GS = 30 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 270 (typ.) (I_DSS = −5 mA)
• Complimentary to 2SK330
• Small package

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