Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)• Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = −5 mA)• Complimentary to 2SK246Specifications Characteristics Symbol Rating Unit Gate-drain voltage VGDS ...
2SJ103: Application• High breakdown voltage: VGDS = 50 V• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)• Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = −5 mA)• Complimen...
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Characteristics | Symbol | Rating | Unit |
Gate-drain voltage | VGDS | 50 | V |
Gate current | IG | -10 | mA |
Drain power dissipation | PD | 300 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).