10N40, 10N60, 10NT54Z1 Selling Leads, Datasheet
MFG:PH Package Cooled: PH D/C:TO:220AB
10N40, 10N60, 10NT54Z1 Datasheet download
Part Number: 10N40
MFG: PH
Package Cooled: PH
D/C: TO:220AB
MFG:PH Package Cooled: PH D/C:TO:220AB
10N40, 10N60, 10NT54Z1 Datasheet download
MFG: PH
Package Cooled: PH
D/C: TO:220AB
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PDF/DataSheet Download
Datasheet: 10N60C
File Size: 891810 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 10N60C
File Size: 891810 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 10N60C
File Size: 891810 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
PARAMETER | SYMBOL | RATINGS | UNIT |
Drain to Source Voltage 10N60-A 10N60-B Gate to Source Voltage Avalanche Current (Note 1) Continuous Drain Current TC = 25 TC = 100 |
VDSS VGSS IAR ID |
600 650 ±30 9.5 9.5 3.3 |
V V A A |
Pulsed Drain Current (Note 1) Power Dissipation Junction Temperature Operating Temperature Storage Temperature |
IDM PD TJ TOPR Tstg |
38 156 +150 -55 ~ +150 -55 ~ +150 |
A W |
Peak Diode Recovery dv/dt (Note 3) Avalanche Energy Single Pulsed (Note 2) Avalanche EnergyRepetitive (Note 1) |
dv/dt EAS EAR |
4.5 700 15.6 |
V/ns mJ mJ |