Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage 10N60-A10N60-BGate to Source Voltage Avalanche...
10N60: Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAME...
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PARAMETER | SYMBOL | RATINGS | UNIT |
Drain to Source Voltage 10N60-A 10N60-B Gate to Source Voltage Avalanche Current (Note 1) Continuous Drain Current TC = 25 TC = 100 |
VDSS VGSS IAR ID |
600 650 ±30 9.5 9.5 3.3 |
V V A A |
Pulsed Drain Current (Note 1) Power Dissipation Junction Temperature Operating Temperature Storage Temperature |
IDM PD TJ TOPR Tstg |
38 156 +150 -55 ~ +150 -55 ~ +150 |
A W |
Peak Diode Recovery dv/dt (Note 3) Avalanche Energy Single Pulsed (Note 2) Avalanche EnergyRepetitive (Note 1) |
dv/dt EAS EAR |
4.5 700 15.6 |
V/ns mJ mJ |
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.