10N60

Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage 10N60-A10N60-BGate to Source Voltage Avalanche...

product image

10N60 Picture
SeekIC No. : 004207952 Detail

10N60: Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAME...

floor Price/Ceiling Price

Part Number:
10N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/8

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* 10A, 600V, RDS(ON) =0.73@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage 10N60-A
10N60-B

Gate to Source Voltage

Avalanche Current (Note 1)

Continuous Drain Current TC = 25
TC = 100
VDSS

VGSS

IAR

ID
600
650

±30

9.5

9.5
3.3
V

V

A

A
Pulsed Drain Current (Note 1)

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature
IDM

PD

TJ

TOPR

Tstg


38

156

+150

-55 ~ +150

-55 ~ +150
A

W





Peak Diode Recovery dv/dt (Note 3)

Avalanche Energy Single Pulsed (Note 2)

Avalanche EnergyRepetitive (Note 1)
dv/dt

EAS

EAR
4.5

700

15.6
V/ns

mJ

mJ



Description

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Integrated Circuits (ICs)
Isolators
Batteries, Chargers, Holders
View more