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10N60

Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage 10N60-A10N60-BGate to Source Voltage Avalanche...

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SeekIC No. : 004207952 Detail

10N60: Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAME...

10N60 Data Sheet

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Part Number:
10N60
Supply Ability:
5000

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Total Cost: $ 0.00

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Product Details

Description



Features:

* 10A, 600V, RDS(ON) =0.73@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage 10N60-A
10N60-B

Gate to Source Voltage

Avalanche Current (Note 1)

Continuous Drain Current TC = 25
TC = 100		 VDSS

VGSS

IAR

ID		 600
650

±30

9.5

9.5
3.3		 V

V

A

A
Pulsed Drain Current (Note 1)

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature		 IDM

PD

TJ

TOPR

Tstg


 38

156

+150

-55 ~ +150

-55 ~ +150		 A

W





Peak Diode Recovery dv/dt (Note 3)

Avalanche Energy Single Pulsed (Note 2)

Avalanche EnergyRepetitive (Note 1)		 dv/dt

EAS

EAR		 4.5

700

15.6		 V/ns

mJ

mJ



Description

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.




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