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Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage 10N60-A10N60-BGate to Source Voltage Avalanche...

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10N60: Features: * 10A, 600V, RDS(ON) =0.73@VGS =10V* Low gate charge ( typical 44 nC)* Low Crss ( typical 18 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications PARAME...

10N60 Data Sheet

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Part Number:: 10N60
Supply Ability:: 5000

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Upload time: 2024/11/23

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Description

Features:

* 10A, 600V, R_DS(ON)=0.73@V_GS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

Specifications

PARAMETER	SYMBOL	RATINGS	UNIT
Drain to Source Voltage 10N60-A 10N60-B Gate to Source Voltage Avalanche Current (Note 1) Continuous Drain Current T_C = 25 T_C = 100	V_DSS V_GSS I_AR I_D	600 650 ±30 9.5 9.5 3.3	V V A A
Pulsed Drain Current (Note 1) Power Dissipation Junction Temperature Operating Temperature Storage Temperature	I_DM P_D T_J T_OPR T_stg	38 156 +150 -55 ~ +150 -55 ~ +150	A W
Peak Diode Recovery dv/dt (Note 3) Avalanche Energy Single Pulsed (Note 2) Avalanche EnergyRepetitive (Note 1)	dv/dt E_AS E_AR	4.5 700 15.6	V/ns mJ mJ

Description

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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10N60

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