FDS9936A

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

5.5 A, 30 V. 0.040  R _DS(ON) =@ V_GS = 10 V,                  
                              R _DS(ON) = 0.060 W @ V_GS = 4.5 V.
High density cell design for extremely low R _DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-5.5	A
		-20
PD	Power Dissipation for Dual Operation (Note 1)	2	W
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6
		1
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	W
Thermal Characteristics
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b)	78	°C/W
		40

Description

SO-8 N-Channel enhancement mode power field effect transistors FDS9936A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to   provide superior switching performance and minimize onstate resistance. These devices FDS9936A are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed.