Features: • 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 VRDS(ON) = 200 m @ VGS = 4.5 V• Low gate charge (2.4nC typical)• Fast switching speed• High performance trench technology for extremely ow RDS(ON)• High power and current handling capabilityApplication• Power ma...
FDS9400: Features: • 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 VRDS(ON) = 200 m @ VGS = 4.5 V• Low gate charge (2.4nC typical)• Fast switching speed• High performance trench technology f...
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Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-30 |
V |
VGSS |
Gate-Source Voltage |
+25 |
V |
ID |
Draint Current - Continuous (Note 1) |
-3.4 |
A |
- Pulsed |
-10 | ||
PD |
Power Dissipation for Single Operation (Note 1a) |
2.5 |
W |
(Note 1b) |
1.2 | ||
(Note 1c) |
1
| ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +175 |
°C |
This FDS9400 P-Channel MOSFET is a rugged gate version of airchild Semiconductor's advanced PowerTrench rocess. It has been optimized for power management pplications requiring a wide range of gave drive oltage ratings (4.5V 25V).