FDS9400

Features: • 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 VRDS(ON) = 200 m @ VGS = 4.5 V• Low gate charge (2.4nC typical)• Fast switching speed• High performance trench technology for extremely ow RDS(ON)• High power and current handling capabilityApplication• Power ma...

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FDS9400 Picture
SeekIC No. : 004341126 Detail

FDS9400: Features: • 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 VRDS(ON) = 200 m @ VGS = 4.5 V• Low gate charge (2.4nC typical)• Fast switching speed• High performance trench technology f...

floor Price/Ceiling Price

Part Number:
FDS9400
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

• 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V
RDS(ON) = 200 m @ VGS = 4.5 V
• Low gate charge (2.4nC typical)
• Fast switching speed
• High performance trench technology for extremely ow RDS(ON)
• High power and current handling capability



Application

• Power management
• Load switch
• Battery protection



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
+25
V
ID
Draint Current - Continuous (Note 1)
-3.4
A
- Pulsed
-10
PD
Power Dissipation for Single Operation (Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C



Description

This FDS9400 P-Channel MOSFET is a rugged gate version of airchild Semiconductor's advanced PowerTrench rocess. It has been optimized for power management pplications requiring a wide range of gave drive oltage ratings (4.5V 25V).




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