FDS9412

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 7.9 A
Resistance Drain-Source RDS (on) : 22 m Ohms


Features:

•  7.9 A, 30 V. RDS(ON)  = 22 mΩ @ VGS = 10 V
                      RDS(ON)  = 36 mΩ @ VGS = 4.5 V
•  Very low gate charge.
•  High switching speed
•  High performance trench technology for extremely low RDS(ON)
•  High power and current handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	7.9	A
		24
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1
		1.0
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This  FDS9412 N-Channel  Logic  Level  MOSFET  is  produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDS9412 are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed.

Parameters:

Technical/Catalog Information	FDS9412
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7.9A
Rds On (Max) @ Id, Vgs	22 mOhm @ 7.9A, 10V
Input Capacitance (Ciss) @ Vds	830pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9412 FDS9412