Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Gate-Source Breakdown Voltage
: +/- 8 V
Package / Case
: SOIC-8 Narrow
Resistance Drain-Source RDS (on)
: 0.13 Ohms
Continuous Drain Current
: 3.5 A
Features: • -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V
RDS(ON) = 0.180 @ VGS = -2.5 V.
• Fast switching speed.
• High density cell design for extremely low RDS(ON).
• High power and current handling capability.ApplicationDC/DC converter
Power management
Load switch
Battery protectionSpecifications
| Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain-Source Voltage |
-20 |
V |
| VGSS |
Gate-Source Voltage |
±8 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
-3.5 |
A |
| -18 |
| PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
2.5 |
W |
| 1.2 |
| 1.0 |
| TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
|
DescriptionThis FDS9431A P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Parameters: | Technical/Catalog Information | FDS9431A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 3.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 405pF @ 10V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 8.5nC @ 4.5V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS9431A
FDS9431A
FDS9431ATR ND
FDS9431ATRND
FDS9431ATR
|
FDS9431A Data Sheet
