Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Configuration
: Single Quad Drain Triple Source
Continuous Drain Current
: 5.3 A
Drain-Source Breakdown Voltage
: - 30 V
Package / Case
: SOIC-8 Narrow
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 50 m Ohms
Features: -5.3 A, -30 V, RDS(ON)= 0.045 W @ VGS = -10 V,
RDS(ON)= 0.075 W @ VGS = - 4.5 V.
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely
used surface mount package. Pinout
Specifications
| Symbol |
Parameter |
FDS8433A |
Units |
| VDSS |
Drain-Source Voltage |
-30 |
V |
| VGSS |
Gate-Source Voltage |
-20 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
-5.3 |
A |
| -50 |
| PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
2.5 |
W |
| 1.2 |
| 1 |
| TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
DescriptionThe FDS9435A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
The feature of the FDS9435A are:(1)-5.3 A, 30 V RDS(ON) = 50 mW @ VGS = 10 V ;RDS(ON) = 80 mW @ VGS = 4.5 V; (2)Low gate charge ; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
The absolute maximum ratings of the FDS9435A can be summarized as:(1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±25 V; (3)ID Drain Current Continuous (Note 1a): 5.3 A Pulsed: 50A; (4)Power Dissipation for Single Operation (Note 1a): 2.5W (Note 1b): 1.2W (Note 1c): 1W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: 55 to +175 °C.
The electical characteristics of the FDS9435A can be summarized as:(1)RqJA Thermal Resistance, Junction-to-Ambient (Note 1a): 50 °C/W; (2)RqJA Thermal Resistance, Junction-to-Ambient (Note 1c) :125 °C/W; (3)RqJC Thermal Resistance, Junction-to-Case (Note 1): 25 °C/W.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .
Parameters: | Technical/Catalog Information | FDS9435A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.3A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 528pF @ 15V |
| Power - Max | 1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS9435A
FDS9435A
FDS9435ACT ND
FDS9435ACTND
FDS9435ACT
|
FDS9435A Data Sheet
