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UPA832TF

Features: • LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA• HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 10 mA• 6-PIN THIN-TYPE...

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SeekIC No. : 004537906 Detail

UPA832TF: Features: • LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA• HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE ...

UPA832TF Data Sheet

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Part Number:
UPA832TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• LOW NOISE:
   Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
   Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
• HIGH GAIN:
   Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
   Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 10 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
   (Q1: NE856, Q2: NE685)


Specifications

SYMBOL PARAMETER UNIT RATINGS
      Q1 Q2
VCBO Collector-base voltage V 20 9
VCEO Collector-emitter voltage V 12 6
VEBO Emitter-base voltage V 3 2
IC Collector current mA 100 30
PT Collector power dissipation mW 150 150
2002
Tj Junction temperature 150 150
TSTG Storage temperature -65 to +150



Description

The UPA832TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device for high dynamic range with excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.




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