Features: • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCESpecifications SYMBOLS PARAMETERS UNITS RATINGS VCBO Col...
UPA800T: Features: • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz• HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz• EXCELLENT LOW ...
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SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCBO | Collector to Base Voltage | V | 20 |
VCEO | Collector to Emitter Voltage | V | 10 |
VEBO | Emitter to Base Voltage | V | 1.5 |
IC | Collector Current | mA | 35 |
PT | Total Power Dissipation 1 Die 2 Die |
mW mW |
110 |
TJ | Junction Temperature | 150 | |
TSTG | Storage Temperature | -65 to +150 |
NEC's UPA800T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications.