PHB6N50E

Features:

• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS VDGR VGS ID IDM Ptot Tj, Tstg	Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature	Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25	- - - - - - - - 55	500 500 ± 30 5.9 3.7 24 125 150	V V V A A A W

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E is supplied in the SOT404 surface mounting package.