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PHB60N06LT

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-sour...

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SeekIC No. : 004460386 Detail

PHB60N06LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...

PHB60N06LT Data Sheet

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Part Number:
PHB60N06LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 175 - 55 V
VDGR Drain-gate voltage Tj =25 to 175 ; RGS = 20 k - 55 V
VGS Gate-source voltage   -- ±13 V
ID Continuous drain current Tmb = 25   58 A
Tmb = 100 - 40 A
IDM Pulsed drain current Tmb = 25 - 232 A
PD Total power dissipation Tmb = 25 - 150 W
Tj, Tstg Operating junction and
storage temperature		   -55 175



Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP60N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB60N06LT is supplied in the SOT404 surface mounting package.




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