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PHB64N03LT

Features: ·Low on-state resistance·Fast switching.Application· Computer motherboard high frequency DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C - 25 V VDGR drain-gate vo...

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SeekIC No. : 004460388 Detail

PHB64N03LT: Features: ·Low on-state resistance·Fast switching.Application· Computer motherboard high frequency DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max ...

PHB64N03LT Data Sheet

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Part Number:
PHB64N03LT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-state resistance
·Fast switching.


Application

· Computer motherboard high frequency DC to DC converters.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) Tj = 25 to 175 °C
-
25
V
VDGR
 drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 k
-
25
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
64
A
Tmb = 100 °C; VGS = 10 V; Figure 2
-
52
A

VGS

 gate-source voltage  
-
±20
V
IDM
 peak drain current Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
240
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
85
W
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25 °C
-
64
A
ISM
 peak source (diode forward) current Tmb = 25 °C; tp 10 s
-
240
A
Avalanche ruggedness      
EDS(AL)S
 non-repetitive drain-source avalanche energy unclamped inductive load; ID = 55 A;
tAL = 0.1 ms; VDD = 15 V; RGS = 50 ;
VGS = 5V; starting Tj = 25 °C
-
60
mJ
IDS(AL)S
 non-repetitive drain-source
avalanche current		 unclamped inductive load; VDD = 15 V;
RGS = 50 ; VGS = 5 V; starting Tj=25 °C
-
64
A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.Product availability:PHB64N03LT in a SOT404 (D2-PAK).




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