Features: Fast Access Time 17,20,25§À(Max.) Low Power DissipationStandby (TTL) : 60§Ì(Max.)(CMOS) : 10§Ì(Max.)Operating KM684002 - 17 : 180§Ì(Max.)KM684002 - 20 : 170§Ì(Max.)KM684002 - 25 : 160§Ì(Max.) Single 5.0V±10% Power Supply TTL Compatible Inputs and...
KM684002I: Features: Fast Access Time 17,20,25§À(Max.) Low Power DissipationStandby (TTL) : 60§Ì(Max.)(CMOS) : 10§Ì(Max.)Operating KM684002 - 17 : 180§Ì(Max.)KM684002 - 20 : 170§&Ig...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter |
Symbol |
Rating |
Unit | |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 7.0 |
V | |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 7.0 |
V | |
Power Dissipation |
PD |
1.0 |
W | |
Storage Temperature |
TSTG |
-65 to 150 |
||
Operating Temperature | Commercial |
TA |
0 to 70 |
|
Extended |
TA |
-25 to 85 |
||
Industrial |
TA |
-40 to 85 |
The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The KM684002 is fabricated using Samsung's advanced CMOS process and designed for high-speed circuit technology.The KM684002 is particularly well suited for use in high-density high-speed system applications. The KM684002 is packaged in a 400 mil 36-pin plastic SOJ.