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KM681000BLG-7L

SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS static RAM device that is fabricated by SAMSUNG's advanced CMOS process technology. And this device also supports low data retention voltage for battery back-up operation with low data retention curr...

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SeekIC No. : 004386150 Detail

KM681000BLG-7L: SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS static RAM device that is fabricated by SAMSUNG's advanced CMOS process technology. And this device...

KM681000BLG-7L Data Sheet

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Part Number:
KM681000BLG-7L
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/11/22

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Description

The KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS static RAM device that is fabricated by SAMSUNG's advanced CMOS process technology. And this device also supports low data retention voltage for battery back-up operation with low data retention current.

Features of the KM681000BLG-7L are:(1)Organization: 128Kx8;(2)Power Supply Voltage: Single 5.0V +/- 10%;(3)Low Data Retention Voltage: 2V(Min);(4)Three state output and TTL Compatible;(5)Package Type: JEDEC Standard 32-DIP, 32-SOP, 32-TSOP IR/F.

The absolute maximum ratings of the KM681000BLG-7L can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to 7.0 V;(2)Voltage on Vcc supply relative to Vss: -0.5 to 7.0 V;(3)Power Dissipation: 1.0 W;(4)Storage temperature: -65 to 150 ;(5)Operating Temperature: 0 to 70 ;(6)Soldering temperature and time: 260 10sec (lead only). If you want to know more information such as the electrical characteristics about the KM681000BLG-7L, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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