Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 3.6A
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 31nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds: 660pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Features: • Surface Mount (IRFBC30S, SiHFBC30S)
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
• Available in Tape and Reel (IRFBC30S,SiHFBC30S)
• Dynamic dV/dt Rating
• 150 Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free AvailableSpecifications
|
Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
600 |
V |
| Gate-Source Voltage |
VGS |
±20 |
V |
| Drain Current-Continuous e |
VGS at 10 V |
TC=25 |
ID |
3.6
2.3 |
A |
| TC=100 |
| Pulsed Drain Currenta e |
IDM |
14 |
A |
| Linear Derating Factor |
|
0.59 |
W/ |
| Single Pulse Avalanche Energyb e |
EAS |
290 |
mJ |
| Repetitive Avalanche Currenta |
IAR |
3.6 |
A |
| Repetitive Avalanche Energye |
EAR |
7.4 |
mJ |
| Maximum Power Dissipation |
TC=25 |
PD |
3.1
74 |
W |
| Ta=25 |
| Peak Diode Recovery dV/dtc |
dV/dt |
3.0 |
V/ns |
Operating Junction and S torage
Temperature R ange |
TJ, TSTG |
-55 to 150 |
|
| Soldering Recommendations (Peak Temperature) |
for 10 s |
|
300d |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 16 mH, RG = 25 , IAS = 2.7 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/s, VDD VDS, TJ 150 .
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may applyDescriptionThird generation Power MOSFETs from Vishay IRFBC30L provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.
IRFBC30L Data Sheet
