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ZXTC2063E6

Features: • NPN - PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecifications Part Number ZXTC2063E6 Product Type NPN + PNP VCEO (V) 40-40 IC(A) 3.5-3 ...

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SeekIC No. : 004552620 Detail

ZXTC2063E6: Features: • NPN - PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecificatio...

ZXTC2063E6 Data Sheet

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Part Number:
ZXTC2063E6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Features:

• NPN - PNP combination
• Very low saturation voltage
• High gain
• SOT23-6 package




Application

• MOSFET and IGBT gate driving
• Motor drive




Pinout

Connection Diagram




Specifications

Part Number ZXTC2063E6
Product Type NPN + PNP
VCEO (V) 40
-40
IC(A) 3.5
-3
ICM (A) 9
-9
PD (W) 1.1
hFE Min 280
200
hFE Max -
@I C (A) 1
-1
VCE(SAT) Max (mV) 110
-290
@ IC (A) 1
-1
@ IB (mA) 20
-20
fT Min (MHz) 190
270
RCE (SAT) (m) 38
58


Parameter Symbol Limit Unit
Collector-base voltage VCBO 130(-45) V
Collector-emitter voltage VCEO 40(-40) V
Emitter-collector voltage (reverse blocking) VECO 6(-3) V
Emitter-base voltage VEBO 7(-7) V
Continuous collector current(c)(f) IC 3.5(-3) A
Peak pulse current ICM 9(-9) A
Base current IB 1(-1) A
Power dissipation @ Tamb = 25(a)(f)
Linear derating factor		 PD 0.7 5.6 W
mW/
Power dissipation @ Tamb = 25(b)(f)
Linear derating factor		 PD 0.9 7.2 W
mW/
Power dissipation @ Tamb = 25(b)(g)
Linear derating factor
 PD 1.1 8.8 W
mW/
Power dissipation @ Tamb = 25(c)(f)
Linear derating factor		 PD 1.1 8.8 W
mW/
Power dissipation @ Tamb = 25(d)(f)
Linear derating factor		 PD 1.7 13.6 W
mW/
Operating and storage temperature range Tj, Tstg -55 to +150
Thermal resistance junction to ambient(a)(f) RJC 179 /W
Thermal resistance junction to ambient(b)(f) RJA 139 /W
Thermal resistance junction to ambient(b)(g) RJC 113 /W
Thermal resistance junction to ambient(c)(f) RJC 113 /W
Thermal resistance junction to ambient(d)(f) RJA 73 /W

NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d)As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.






Description

Advanced process capability ZXTC2063E6 has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications.






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