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ZXTC2045E6

Features: • 40V complementary device• Up to 5 amps peak current• High hFE• SOT236 packageApplication• MOSFET and IGBT gate drivingPinoutSpecifications SYMBOL PARAMETER NPN PNP UNIT BVCBO Collector to base voltage 40 -40 V BVCES Collector to emitter v...

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SeekIC No. : 004552617 Detail

ZXTC2045E6: Features: • 40V complementary device• Up to 5 amps peak current• High hFE• SOT236 packageApplication• MOSFET and IGBT gate drivingPinoutSpecifications SYMBOL PARA...

ZXTC2045E6 Data Sheet

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Part Number:
ZXTC2045E6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 40V complementary device
• Up to 5 amps peak current
• High hFE
• SOT236 package




Application

• MOSFET and IGBT gate driving




Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER NPN PNP UNIT
BVCBO Collector to base voltage
 40 -40 V
BVCES Collector to emitter voltage
 40 -40 V
BVCEO Collector-to-Emitter Voltage 30 -30 V
BVEBO Emitter to base voltage 7 -7 V
ICM Collector Current (Pulse) 5 -5 A
IC Collector current 1.5 -1.5 A
IB Base Current 1 -1 A
Pd Power dissipation at TA =25 (a) (c)
Linear derating factor		 0.9
7.2		 W
mW/
Pd Power dissipation at TA =25 (a) (d)
Linear derating factor		 1.1
8.8		 W
mW/
Pd Power dissipation at TA =25 (b) (c)
Linear derating factor		 1.7
13.6		 W
mW/
Tj Junction temperature 150
Tstg Storage temperature -55to~150


Part Number ZXTC2045E6
Product Type NPN + PNP
VCEO (V) 30
-30
IC(A) 1.5
-1.5
ICM (A) 5
-5
PD (W) 1.1
hFE Min 180
180
hFE Max 500
500
@I C (A) 0.1
-0.1
VCE(SAT) Max (mV) 375
-375
@ IC (A) 0.75
-0.75
@ IB (mA) 15
-15
fT Min (MHz) -
RCE (SAT) (m) -





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