Features: • NPN-PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecifications Part Number ZXTC2061E6 Product Type NPN + PNP VCEO(V) 12-12 IC (A) 5-3.5 I...
ZXTC2061E6: Features: • NPN-PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecifications...
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Transistors Bipolar (BJT) 20V 1A Complementary Med power transistor
Part Number | ZXTC2061E6 |
Product Type | NPN + PNP |
VCEO(V) | 12 -12 |
IC (A) | 5 -3.5 |
ICM (A) | 12 -10 |
PD (W) | 1.1 |
hFE Min | 500 500 |
hFE Max | 1500 1500 |
@ IC (A) | 0.01 -0.01 |
VCE (SAT) Max (mV) | 40 -70 |
@ IC (A) | 1 -1 |
@ IB (mA) | 100 -100 |
fT Min (MHz) | - |
RCE (SAT) (m) | 25 45 |
Advanced process capability ZXTC2061E6 has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications.