XP134A11A1SR

Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Built-in` Package : SOP-8ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-...

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SeekIC No. : 004548986 Detail

XP134A11A1SR: Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Bu...

floor Price/Ceiling Price

Part Number:
XP134A11A1SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V)
                                           :Rds(on)=0.11(Vgs=-4.5V)
` Ultra High-Speed Switching
` Driving Voltage : -4.5V
` P-Channel Power MOSFET
` DMOS Structure
` Two FET Devices Built-in
` Package : SOP-8



Application

Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems



Pinout

  Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage

Gate-Source Voltage
Vdss

Vgss
-30

±20
V

V
Drain Current (DC)

Drain Current (Pulse)
Id

Idp
-4

-16
A

A
Reverse Drain Current

Channel Power Dissipation *
Idr

Pd
-4

2
A

W
Channel Temperature

Storage Temperature Range
Tch

Tstg
150

-55~150



* When implemented on a glass epoxy PCB


Description

The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics Two FET devices are built into the one package.

Because high-speed switching is possible, the XP134A11A1SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP134A11A1SR makes high density mounting possible.




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