Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Built-in` Package : SOP-8ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-...
XP134A11A1SR: Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-Speed Switching` Driving Voltage : -4.5V` P-Channel Power MOSFET` DMOS Structure` Two FET Devices Bu...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: ·Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) : Rds(on)=0.022Ω(Vgs=2.5V...
Features: `Low on-state resistance : Rds(on)=0.03 (Vgs=10V) : Rds(on)=0.045 (Vgs=4.5V)`Ultra high-...
PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage Gate-Source Voltage |
Vdss Vgss |
-30 ±20 |
V V |
Drain Current (DC) Drain Current (Pulse) |
Id Idp |
-4 -16 |
A A |
Reverse Drain Current Channel Power Dissipation * |
Idr Pd |
-4 2 |
A W |
Channel Temperature Storage Temperature Range |
Tch Tstg |
150 -55~150 |
The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics Two FET devices are built into the one package.
Because high-speed switching is possible, the XP134A11A1SR can be efficiently set thereby saving energy.
The small SOP-8 package of XP134A11A1SR makes high density mounting possible.