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XP134A01A9SR

Features: ·Low on-state resistance: Rds(on)=0.12Ω(Vgs=-10V): Rds(on)=0.19Ω(Vgs=-4.5V)·Ultra high-speed switching·Operational Voltage : -4.5V·High density mounting : SOP-8Application· Notebook PCs· Cellular and portable phones· On-board power supplies· Li-ion battery systemsPinoutSpecif...

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SeekIC No. : 004548984 Detail

XP134A01A9SR: Features: ·Low on-state resistance: Rds(on)=0.12Ω(Vgs=-10V): Rds(on)=0.19Ω(Vgs=-4.5V)·Ultra high-speed switching·Operational Voltage : -4.5V·High density mounting : SOP-8Application· Not...

XP134A01A9SR Data Sheet

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Part Number:
XP134A01A9SR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Low on-state resistance  : Rds(on)=0.12Ω(Vgs=-10V)
                                           : Rds(on)=0.19Ω(Vgs=-4.5V)
·Ultra high-speed switching
·Operational Voltage        : -4.5V
·High density mounting    : SOP-8


Application

· Notebook PCs
· Cellular and portable phones
· On-board power supplies
· Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -30 V
Gate-Source Voltage Vgss ±20 V
Drain Current (DC) Id -3.5 A
Drain Current (Pulse) Idp -10 A
Reverse Drain Current Idr -3.5 A
Continuous Channel
Power Dissipation (note)		 Pd 2 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP134A01A9SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the XP134A01A9SR can be efficiently set thereby saving energy.The small SOP-8 package makes high density mounting possible.




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