XP133A1235SR

Features:

Low on-state resistance : Rds (on) = 0.035 ( Vgs = 4.5V )
                                           Rds (on) = 0.048 ( Vgs = 2.5V )
Ultra high-speed switching
Operational Voltage : 2.5V
High density mounting : SOP - 8


Application

􀀁 Notebook PCs
􀀁 Cellular and portable phones
􀀁 On - board power supplies
􀀁 Li - ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	20	V
Gate-Source Voltage	Vgss	±12	V
Drain Current (DC)	Id	6	A
Drain Current (Pulse)	Idp	20	A
Reverse Drain Current	Idr	6	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP133A1235SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Two FET XP133A1235SR are built into the one package.

Because high-speed switching of XP133A1235SR is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package of XP133A1235SR makes high density mounting possible.