Features: ·Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V) : Rds(on)=0.045Ω (Vgs=4.5V)·Ultra high-speed switching·Operational Voltage : 4.5V·High density mounting : SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery systemsPinoutSpecifi...
XP133A1145SR: Features: ·Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V) : Rds(on)=0.045Ω (Vgs=4.5V)·Ultra high-speed switching·Operational Voltage : 4.5V·High density mounting : SOP-8Application·N...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs...
Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed ...
PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage | Vdss | 30 | V |
Gate-Source Voltage | Vgss | ±20 | V |
Drain Current (DC) | Id | 6 | A |
Drain Current (Pulse) | Idp | 20 | A |
Reverse Drain Current | Idr | 6 | A |
Continuous Channel Power Dissipation (note) |
Pd | 2 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55~150 |
The XP133A1145SR is an N-Channel Power MOS FET with low on-stateresistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package of XP133A1145SR makes high density mounting possible.