XP133A1145SR

Features: ·Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V) : Rds(on)=0.045Ω (Vgs=4.5V)·Ultra high-speed switching·Operational Voltage : 4.5V·High density mounting : SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery systemsPinoutSpecifi...

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XP133A1145SR Picture
SeekIC No. : 004548981 Detail

XP133A1145SR: Features: ·Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V) : Rds(on)=0.045Ω (Vgs=4.5V)·Ultra high-speed switching·Operational Voltage : 4.5V·High density mounting : SOP-8Application·N...

floor Price/Ceiling Price

Part Number:
XP133A1145SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V)
                                          : Rds(on)=0.045Ω (Vgs=4.5V)
·Ultra high-speed switching
·Operational Voltage       : 4.5V
·High density mounting   : SOP-8



Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems



Pinout

  Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 30 V
Gate-Source Voltage Vgss ±20 V
Drain Current (DC) Id 6 A
Drain Current (Pulse) Idp 20 A
Reverse Drain Current Idr 6 A
Continuous Channel
Power Dissipation (note)
Pd 2 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP133A1145SR is an N-Channel Power MOS FET with low on-stateresistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package of XP133A1145SR makes high density mounting possible.




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