Features: ·Low on-state resistance : Rds (on) = 0.033Ω ( Vgs = -4.5V Rds (on) = 0.055Ω ( Vgs = -2.5V )·Ultra high-speed switching·Operational Voltage: -2.5V·High density mounting: SOP - 8Application·Notebook PCs·Cellular and portable phones·On - board power supplies·Li - ion battery sy...
XP132A1635SR: Features: ·Low on-state resistance : Rds (on) = 0.033Ω ( Vgs = -4.5V Rds (on) = 0.055Ω ( Vgs = -2.5V )·Ultra high-speed switching·Operational Voltage: -2.5V·High density mounting: SOP - ...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs...
Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed ...
PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage | Vdss | -20 | V |
Gate-Source Voltage | Vgss | ±12 | V |
Drain Current (DC) | Id | -8 | A |
Drain Current (Pulse) | Idp | -32 | A |
Reverse Drain Current | Idr | -8 | A |
Continuous Channel Power Dissipation (note) |
Pd | 2.5 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55~150 |
The XP132A1365SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the XP132A1365SR can be efficientlyset thereby saving energy.The small SOP-8 package makes high density mounting possible.