XP132A1635SR

Features: ·Low on-state resistance : Rds (on) = 0.033Ω ( Vgs = -4.5V Rds (on) = 0.055Ω ( Vgs = -2.5V )·Ultra high-speed switching·Operational Voltage: -2.5V·High density mounting: SOP - 8Application·Notebook PCs·Cellular and portable phones·On - board power supplies·Li - ion battery sy...

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SeekIC No. : 004548978 Detail

XP132A1635SR: Features: ·Low on-state resistance : Rds (on) = 0.033Ω ( Vgs = -4.5V Rds (on) = 0.055Ω ( Vgs = -2.5V )·Ultra high-speed switching·Operational Voltage: -2.5V·High density mounting: SOP - ...

floor Price/Ceiling Price

Part Number:
XP132A1635SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Low on-state resistance : Rds (on) = 0.033Ω ( Vgs = -4.5V
                                          Rds (on) = 0.055Ω ( Vgs = -2.5V )
·Ultra high-speed switching
·Operational Voltage        : -2.5V
·High density mounting    : SOP - 8



Application

·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems



Pinout

  Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id -8 A
Drain Current (Pulse) Idp -32 A
Reverse Drain Current Idr -8 A
Continuous Channel
Power Dissipation (note)
Pd 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP132A1365SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the XP132A1365SR can be efficientlyset thereby saving energy.The small SOP-8 package makes high density mounting possible.




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