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XP131A1617SR

Features: Low on-state resistance : Rds (on) = 0.014 ( Vgs = 4.5V ) Rds (on) = 0.019 ( Vgs = 2.5V )Ultra high-speed switchingOperational Voltage : 2.5VHigh density mounting : SOP - 8Application􀀁 Notebook PCs􀀁 Cellular and portable phones􀀁 On - board power suppliesИ...

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SeekIC No. : 004548970 Detail

XP131A1617SR: Features: Low on-state resistance : Rds (on) = 0.014 ( Vgs = 4.5V ) Rds (on) = 0.019 ( Vgs = 2.5V )Ultra high-speed switchingOperational Voltage : 2.5VHigh density mounting : SOP - 8Application ...

XP131A1617SR Data Sheet

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Part Number:
XP131A1617SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance : Rds (on) = 0.014 ( Vgs = 4.5V )
                                           Rds (on) = 0.019 ( Vgs = 2.5V )
Ultra high-speed switching
Operational Voltage : 2.5V
High density mounting : SOP - 8


Application

􀀁 Notebook PCs
􀀁 Cellular and portable phones
􀀁 On - board power supplies
􀀁 Li - ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

20

V

Gate-Source Voltage

Vgss

±12

V

Drain Current (DC)

Id

10

A

Drain Current (Pulse)

Idp

40

A

Reverse Drain Current

Idr

10

A

Continuous Channel
Power Dissipation (note)

Pd

2.5

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP131A1617SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the XP131A1617SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP131A1617SR makes high density mounting possible.


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