Features: ·Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V ) : Rds (on) = 0.04Ω ( Vgs = 2.5V ) : Rds (on) = 0.07Ω ( Vgs = 1.5V )·Ultra high-speed switching·Operational Voltage : 1.5V·High density mounting: SOP-8Application·Notebook PCs·Cellular and portable phones·On-boar...
XP131A1330SR: Features: ·Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V ) : Rds (on) = 0.04Ω ( Vgs = 2.5V ) : Rds (on) = 0.07Ω ( Vgs = 1.5V )·Ultra high-speed switching·Operational Volt...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs...
Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed ...
PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage | Vdss | 20 | V |
Gate-Source Voltage | Vgss | ±8 | V |
Drain Current (DC) | Id | 8 | A |
Drain Current (Pulse) | Idp | 30 | A |
Reverse Drain Current | Idr | 8 | A |
Continuous Channel Power Dissipation (note) |
Pd | 2.5 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55~150 |
The XP131A1330SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package of XP131A1330SR makes high density mounting possible.