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XP131A1330SR

Features: ·Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V ) : Rds (on) = 0.04Ω ( Vgs = 2.5V ) : Rds (on) = 0.07Ω ( Vgs = 1.5V )·Ultra high-speed switching·Operational Voltage : 1.5V·High density mounting: SOP-8Application·Notebook PCs·Cellular and portable phones·On-boar...

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SeekIC No. : 004548968 Detail

XP131A1330SR: Features: ·Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V ) : Rds (on) = 0.04Ω ( Vgs = 2.5V ) : Rds (on) = 0.07Ω ( Vgs = 1.5V )·Ultra high-speed switching·Operational Volt...

XP131A1330SR Data Sheet

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Part Number:
XP131A1330SR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V )
                                          : Rds (on) = 0.04Ω ( Vgs = 2.5V )
                                          : Rds (on) = 0.07Ω ( Vgs = 1.5V )
·Ultra high-speed switching
·Operational Voltage        : 1.5V
·High density mounting    : SOP-8


Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 20 V
Gate-Source Voltage Vgss ±8 V
Drain Current (DC) Id 8 A
Drain Current (Pulse) Idp 30 A
Reverse Drain Current Idr 8 A
Continuous Channel
Power Dissipation (note)		 Pd 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP131A1330SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package of XP131A1330SR makes high density mounting possible.




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