Features: `Low on-state resistance : Rds(on)=0.03 (Vgs=10V) : Rds(on)=0.045 (Vgs=4.5V)`Ultra high-speed switching Operational Voltage : 4.5V`High density mounting : SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery systemsPinoutSpecifications ...
XP131A1145SR: Features: `Low on-state resistance : Rds(on)=0.03 (Vgs=10V) : Rds(on)=0.045 (Vgs=4.5V)`Ultra high-speed switching Operational Voltage : 4.5V`High density mounting : SOP-8Application·Notebook PCs·Cel...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs...
Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed ...
PARAMETER |
SYMBOL |
RATINGS |
UNITS |
Drain-source Voltage |
Vdss |
30 |
V |
Gate-Source Voltage |
Vgss |
+20 |
V |
Drain Current(Dc) |
Id |
7 |
A |
Drain Current(Pulse) |
Idp |
30 |
A |
Reverse Drain Current |
Idr |
7 |
A |
Continuous Channel Power Dissipation(note) |
Pd |
2.5 |
W |
Channel Temperature |
Tch |
150 |
|
Storage Temeperature |
Tstg |
-55150 |
The XP131A1145SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the XP131A1145SR can be efficiently set thereby saving energy.
The small SOP-8 package of XP131A1145SR makes high density mounting possible