XD010-12S-D4F

MODULE POWER AMP LDMOS 10W AB

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SeekIC No. : 004121195 Detail

XD010-12S-D4F: MODULE POWER AMP LDMOS 10W AB

floor Price/Ceiling Price

Part Number:
XD010-12S-D4F
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Series: - Processor Series : LPC1316
Manufacturer: RFMD Frequency: 869MHz ~ 894MHz
P1dB: 41.8dBm (15W) Gain: 32dB
Noise Figure: - RF Type: CDMA, GSM, EDGE, W-CDMA
Voltage - Supply: 28V Current - Supply: -
Test Frequency: 880MHz Package / Case: 4-SIP Module    

Description

Series: -
Noise Figure: -
Current - Supply: -
Gain: 32dB
Manufacturer: RFMD
Packaging: Bulk
Voltage - Supply: 28V
P1dB: 41.8dBm (15W)
Test Frequency: 880MHz
Frequency: 869MHz ~ 894MHz
Package / Case: 4-SIP Module
RF Type: CDMA, GSM, EDGE, W-CDMA


Features:

• 50 W RF impedance
• 15W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 32 dB at 880 MHz
• Robust 8000V ESD (HBM), Class 3B
• XeMOS II LDMOS FETS
• Temperature Compensation





Application

• Base Station PA driver
• Repeater
• CDMA / WCDMA
• GSM / EDGE





Specifications

Parameter Value Unit
1st Stage Bias Voltage (VD1 ) 35 V
2nd Stage Bias Voltage (VD2) 35 V
RF Input Power +20 dBm
Load Impedance for Continuous Operation
Without Damage
5:1 VSWR
Output Device Channel Temperature +200
Operating Temperature Range -20 to +90
Storage Temperature Range -40 to +100
Note 1:
The internally generated gate voltage is thermally compensated
to maintain constant quiescent current over the temperature
range listed in the data sheet. No compensation is
provided for gain changes with temperature. This can only be
accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No additional
bypass elements are required, however some applications
may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to
an adjacent PCB. The maximum soldering iron tip temperature
should not exceed 700° C, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN060 (www.sirenza.com) for further
installation
instructions.


Series XD
Frequency (MHz) 869 to 894
Gain (dB) 32
OP1dB (W) 15
Eff (%) 33
Vd (V) 28
Idq (mA) 380





Description

Sirenza Microdevices' XD010-12S-D4F 15W power module is a robust 2- stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is internally matched to 50 ohms.






Parameters:

Technical/Catalog InformationXD010-12S-D4F
VendorSirenza Microdevices Inc
CategoryRF and RFID
Package / CaseModule
Voltage - Supply28V
Current - Supply-
Gain32dB
Frequency869MHz ~ 894MHz
RF TypeCDMA, GSM, EDGE, W-CDMA
PackagingBulk
Noise Figure-
P1db15W
Test Frequency880MHz
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names XD010 12S D4F
XD01012SD4F



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