XD010-04S-D4F

MODULE POWER AMP LDMOS 10W AB

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XD010-04S-D4F Picture
SeekIC No. : 004121194 Detail

XD010-04S-D4F: MODULE POWER AMP LDMOS 10W AB

floor Price/Ceiling Price

Part Number:
XD010-04S-D4F
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Series: - Processor Series : LPC1316
Manufacturer: RFMD Frequency: 350MHz ~ 600MHz
P1dB: 40.8dBm (12W) Gain: 32dB
Noise Figure: - RF Type: Broadcast Television, CDMA450, TETRA
Voltage - Supply: 28V Current - Supply: -
Test Frequency: 450MHz Package / Case: 4-SIP Module    

Description

Series: -
Noise Figure: -
Current - Supply: -
Gain: 32dB
Manufacturer: RFMD
Packaging: Bulk
Test Frequency: 450MHz
Voltage - Supply: 28V
Frequency: 350MHz ~ 600MHz
P1dB: 40.8dBm (12W)
RF Type: Broadcast Television, CDMA450, TETRA
Package / Case: 4-SIP Module


Features:

• Available in RoHS compliant packaging
• 50 W RF impedance
• 12W Output P1dB • Single Supply Operation : Nominally 28V
• High Gain: 32 dB at 450 MHz
• High Efficiency: 30% at 450 MHz
• Robust 8000V ESD (HBM), Class 3B
• XeMOS II LDMOS FETS
• Temperature Compensation





Application

• DTV
• Public Service
• Wireless Infrastructure
• Military Communications





Specifications

Parameters
Value
Unit
1st Stage Bias Voltage (VD1 )
35
V
2nd Stage Bias Voltage (VD2)
35
V
RF Input Power
+20
dBm
Load Impedance for Continuous Operation Without
Damage
5:1
VSWR
Output Device Channel Temperature
+200
Operating Temperature Range
-20 to +90
Storage Temperature Range
-40 to +100
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation see typical setup values
specified in the table on page one.


Series XD
Frequency (MHz) 350 to 600
Gain (dB) 32
OP1dB (W) 12
Eff (%) 30
Vd (V) 28
Idq (mA) 380





Description

Sirenza Microdevices' XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is internally matched to 50 ohms.






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