Features: • Available in RoHS compliant packaging• 50 W RF impedance• 12W Output P1dB • Single Supply Operation : Nominally 28V• High Gain: 32 dB at 450 MHz• High Efficiency: 30% at 450 MHz• Robust 8000V ESD (HBM), Class 3B• XeMOS II LDMOS FETS•...
XD010-04S-D4FY: Features: • Available in RoHS compliant packaging• 50 W RF impedance• 12W Output P1dB • Single Supply Operation : Nominally 28V• High Gain: 32 dB at 450 MHz• High...
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Parameters |
Value |
Unit |
1st Stage Bias Voltage (VD1 ) |
35 |
V |
2nd Stage Bias Voltage (VD2) |
35 |
V |
RF Input Power |
+20 |
dBm |
Load Impedance for Continuous Operation Without Damage |
5:1 |
VSWR |
Output Device Channel Temperature |
+200 |
|
Operating Temperature Range |
-20 to +90 |
|
Storage Temperature Range |
-40 to +100 |
|
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. |
Sirenza Microdevices' XD010-04S-D4FY 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. XD010-04S-D4FY is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. XD010-04S-D4FY is internally matched to 50 ohms.