WV3EG64M64ETSU-D4

Features: • Fast data transfer rate: PC3200 & PC2700• Clock speeds of 200MHz & 166MHz• Bi-directional data strobes (DQS)• Differential clock inputs (CK & CK#)• Programmable Read Latency : DDR400 (3 clock), DDR333 (2.5 clock)• Programmable Burst Lengt...

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SeekIC No. : 004546967 Detail

WV3EG64M64ETSU-D4: Features: • Fast data transfer rate: PC3200 & PC2700• Clock speeds of 200MHz & 166MHz• Bi-directional data strobes (DQS)• Differential clock inputs (CK & CK#)R...

floor Price/Ceiling Price

Part Number:
WV3EG64M64ETSU-D4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Fast data transfer rate: PC3200 & PC2700
• Clock speeds of 200MHz & 166MHz
• Bi-directional data strobes (DQS)
• Differential clock inputs (CK & CK#)
• Programmable Read Latency : DDR400 (3 clock), DDR333 (2.5 clock)
• Programmable Burst Length (2, 4 or 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto and self refresh, 7.8µs refresh interval (8K (64ms refresh)
• Serial presence detect (SPD) with EEPROM
• Serial presence detect with EEPROM
• VCC = VCCQ = +2.5V ±0.2V (166MHz)
• VCC = VCCQ = +2.6V ±0.1V (200MHz)
• Gold edge contacts
• JEDEC standard 200 pin, small-outline, SO-DIMM package
• PCB height option: D4: 31.75 mm (1.25") TYP



Specifications

Parameter
Symbol
Value
Units
Voltage on any in relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VCC & VCCQ supply relative to VSS
VCC, VCCQ
-1.0 ~ 3.6
V
Voltage on VREF supply relative to VSS
VREF
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Operating temperature
TA
0 ~ 70
Power dissipation
PD
8
W
Short circuit output current
IOS
50
mA
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.



Description

The WV3EG64M64ETSU-D4 is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eight 64Mx8 DDR SDRAMs TSOP-II packages mounted on a 200 pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device WV3EG64M64ETSU-D4 to be useful for a variety of high bandwidth, high performance memory system ap pli ca tions.




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